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Reaction kinetics of cerium thin films with H2, O2 and H2O systems at 298 K

โœ Scribed by M Hadano; N Urushihara; S Terada; D Katsuya; H Uchida


Book ID
117620367
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
199 KB
Volume
330-332
Category
Article
ISSN
0925-8388

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The kinetics of CzH50 and CzH502 radicals with NO have been studied at 298 K using the discharge flow technique coupled to laser induced fluorescence (LIF) and mass spectrometry analysis. The temporal profiles of CzH5O were monitored by LIF. The rate constant for CzH5O + NO -Products (21, measured i