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RE (RE = Sm, Eu, Gd)-doped CeO2single buffer layers for coated conductors prepared by chemical solution deposition

✍ Scribed by Sun, Ruiping ;Pu, Minghua ;Li, Guo ;Wang, Wentao ;Pan, Min ;Zhang, Hong ;Lei, Ming ;Wu, Wei ;Zhang, Xin ;Yang, Ye ;Zhang, Yong ;Zhao, Yong


Book ID
105365007
Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
402 KB
Volume
206
Category
Article
ISSN
0031-8965

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✦ Synopsis


Abstract

Textured RE (RE = Sm, Eu, Gd)‐doped CeO~2~ single buffer layers for coated conductors were prepared by a polymer assisted chemical solution deposition (PACSD) approach. The as‐grown buffer layers on biaxially textured NiW(5%) alloy tapes were characterized by X‐ray diffraction (XRD) and scanning electron microscopy (SEM) as well as atomic force microscopy (AFM). The thicknesses of these buffer layers have been determined to be over 150 nm, on which a YBCO film has been deposited with an onset transition temperature above 90 K and a critical current density of 1 MA cm^–2^. These results indicate that RE doping can increase the critical thickness of CeO~2~ and PACSD may be a cost‐effective way to deposit CeO~2~. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)


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