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Re-examination of multiple-quantum-barrier for semiconductor heterostructure lasers

✍ Scribed by Rui Q. Yang; Yucai Zhou; S.S. Pei


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
202 KB
Volume
20
Category
Article
ISSN
0749-6036

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✦ Synopsis


We have shown that the enhancement of carrier confinement by introducing a multiplequantum-barrier into the cladding region of semiconductor heterostructure lasers is substantially less than what was previously predicted, because the reflectivity of an electron incident on a multiple-quantum-barrier depends on its transverse momentum, thereby limiting the expected improvement in laser characteristics.


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## Abstract Rate equations for multiple‐quantum‐well (MQW) laser structure with carrier transport effects and advanced models of optical modal gain were used to extract relevant laser's parameters used in simulations. The many‐body effects of bandgap renormalization, Coulombic scattering interactio