This letter presents the design of a monolithic pixel sensor with 10 Γ 10 mm 2 pixels in OKI 0:15 mm fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1:35 GeV e Γ beam at the LBNL ALS.
β¦ LIBER β¦
R&D of a pixel sensor based on fully depleted SOI technology
β Scribed by Toru Tsuboyama; Yasuo Arai; Koichi Fukuda; Kazuhiko Hara; Hirokazu Hayashi; Masashi Hazumi; Jiro Ida; Hirokazu Ikeda; Yoichi Ikegami; Hirokazu Ishino; Takeo Kawasaki; Takashi Kohriki; Hirotaka Komatsubara; Elena Martin; Hideki Miyake; Ai Mochizuki; Morifumi Ohno; Yuuji Saegusa; Hiro Tajima; Osamu Tajima; Tomiaki Takahashi; Susumu Terada; Yoshinobu Unno; Yutaka Ushiroda; Gary Varner
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 724 KB
- Volume
- 582
- Category
- Article
- ISSN
- 0168-9002
No coin nor oath required. For personal study only.
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