RbxK1-xTiOPO4 Thin Films Grown on KTiOPO4 Substrates by Liquid Phase Epitaxy
โ Scribed by Dr. L. P. Shi; E. Y. B. Pun; P. S. Chung
- Publisher
- John Wiley and Sons
- Year
- 1997
- Tongue
- English
- Weight
- 354 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0232-1300
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โฆ Synopsis
The properties of RbXK1-,TiOPO~ thin films grown on KTiOPOa substrates are reported. High quality films were obtained using the flux liquid phase epitaxy method, and optical waveguiding was observed in these epitaxial films. X-ray analysis shows that the epitaxial films are single crystals films. Their cell constants are different from those of the substrates. The epitaxy growth rate and other film properties were compared for films grown on different faces. Two different surface morphologies were observed for films grown on (100) faces. The morphologies on (201) and (201) faces were also different. The quality of films grown on the (201) face-was better. The reason for a structure inversion for films grown on the z-face is discussed.
๐ SIMILAR VOLUMES
Erbium (Er 3+ ) doped LiNbO 3 single crystal thin films have been grown LiNbO 3 (001) substrate by the liquid phase epitaxy method. The crystallinity was determined by high-resolution X-ray diffraction. The lattice mismatch between Er 3+ doped LiNbO 3 films and LiNbO 3 (001) substrate was investigat