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RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for silicon–carbide synthesis study

✍ Scribed by S. Intarasiri; T. Kamwanna; A. Hallén; L.D. Yu; M.S. Janson; C. Thongleum; G. Possnert; S. Singkarat


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
449 KB
Volume
249
Category
Article
ISSN
0168-583X

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