Rare-earth scandate single- and multi-layer thin films as alternative gate oxides for microelectronic applications
✍ Scribed by T. Heeg; M. Wagner; J. Schubert; Ch. Buchal; M. Boese; M. Luysberg; E. Cicerrella; J.L. Freeouf
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 642 KB
- Volume
- 80
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
Thin films of rare-earth scandates (REScO 3 ) as well as multi-layers of scandates and titanates have been prepared using pulsed laser deposition. Epitaxial films were grown on SrRuO 3 /SrTiO 3 (100) as well as amorphous films on silicon substrates. The epitaxial films are investigated to measure the physical properties of the crystalline material. Electrical measurements (CV, leakage current) show for example high r > 20 for the scandates and r > 35 for the epitaxial and amorphous multi-layer films. A diffusion of the new materials into silicon is not observed.