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Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices

✍ Scribed by Steckl, A.J.; Heikenfeld, J.C.; Dong-Seon Lee; Garter, M.J.; Baker, C.C.; Yongqiang Wang; Jones, R.

Book ID: 114569567
Publisher: IEEE
Year: 2002
Tongue: English
Weight: 831 KB
Volume: 8
Category: Article
ISSN: 1077-260X
DOI: 10.1109/jstqe.2002.801690

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