Rapid crystallization of WS2films assisted by a thin nickel layer: Anin situenergy-dispersive X-ray diffraction study
✍ Scribed by Ellmer, K. ;Seeger, S. ;Mientus, R.
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 272 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
By rapid thermal crystallization of an amorphous WS~3+x~ film, deposited by reactive magnetron sputtering at temperatures below 150 °C, layer‐type semiconducting tungsten disulfide films (WS~2~) were grown. The rapid crystallization was monitored in real‐time by in situ energy‐dispersive X‐ray diffraction. The films crystallize very fast (>40 nm/s), provided that a thin nickel film acts as nucleation seeds. Experiments on different substrates and the onset of the crystallization only at a temperature between 600 and 700 °C points to the decisive role of seeds for the textured growth of WS~2~, most probably liquid NiS__~x~__ drops. The rapidly crystallized WS~2~ films exhibit a pronounced (001) texture with the van der Waals planes oriented parallel to the surface, leading to photoactive layers with a high hole mobility of about 80 cm^2^/Vs making such films suitable as absorbers for thin film solar cells. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)