## Abstract A polarized Raman method is described to measure the tensor elements of the residual stress state (induced upon fabrication) in a thin silicon plate, a suspended structure belonging to the test element group (TEG) chip of a microelectromechanical system (MEMS). The residual stress data
Raman Tensor Analysis of Crystalline Lead Titanate by Quantitative Polarized Spectroscopy
โ Scribed by Fujii, Y.; Noju, M.; Shimizu, T.; Taniguchi, H.; Itoh, M.; Nishio, I.
- Book ID
- 124074954
- Publisher
- Taylor and Francis Group
- Year
- 2014
- Tongue
- English
- Weight
- 343 KB
- Volume
- 462
- Category
- Article
- ISSN
- 0015-0193
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