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Raman study of a-Si:H films deposited by PECVD at various silane temperatures before glow-discharge

✍ Scribed by N.M. Liao; W. Li; Y.D. Jiang; Y.J. Kuang; K.C. Qi; Z.M. Wu; S.B. Li


Publisher
Springer
Year
2008
Tongue
English
Weight
233 KB
Volume
91
Category
Article
ISSN
1432-0630

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