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Raman spectroscopic and Hall effect analysis of the free electron concentration in GaAs with ultrahigh silicon doping
✍ Scribed by Ramsteiner, M.; Wagner, J.; Hiesinger, P.; KoÌhler, K.; RoÌssler, U.
- Book ID
- 120471051
- Publisher
- American Institute of Physics
- Year
- 1993
- Tongue
- English
- Weight
- 726 KB
- Volume
- 73
- Category
- Article
- ISSN
- 0021-8979
- DOI
- 10.1063/1.353771
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