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Raman Scattering Study of Zincblende InxGa1–xN Alloys

✍ Scribed by A. Tabata; E. Silveira; J.R. Leite; R. Trentin; L.M.R. Scolfaro; V. Lemos; T. Frey; D.J. As; D. Schikora; K. Lischka

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
171 KB
Volume
216
Category
Article
ISSN
0370-1972

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✦ Synopsis

We report on first-order micro-Raman and resonant micro-Raman scattering measurements on c-In x Ga 1Àx N (0 x 0X31) epitaxial layers. We have found that both, the transverse-optical (TO) and longitudinal-optical (LO) phonons of In x Ga 1Àx N alloy exhibit a one-mode-type behavior. Their frequencies at G lie on straight lines connecting the corresponding values obtained for the c-GaN and c-InN binary compounds. Evidence for phase separation is shown in the sample with the alloy composition x = 0.31. The Raman spectra, with excitation energy close to 2.4 eV, show an enhanced additional peak, with frequency between the values found for the LO and TO phonon modes of the c-In 0.31 Ga 0.69 N epitaxial layer. We ascribed this peak to the LO phonon mode of a minority phase with In content of %0.80.

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A. A. Klochikhin (a), V. V. Emtsev (a), S. V. Ivanov (a), V. V. Vekshin (a), F. Bechstedt (b), J. Furthmu ¨ller (b), H. Harima (c), A. V. Mudryi (d), A. Hashimoto (e), A. Yamamoto (e), J. Aderhold (f), J. Graul (f), and E. E. Haller (g)