Raman scattering study of the plasmon modes in bilayer systems
β Scribed by D.S. Kainth; D. Richards; H.P. Hughes; M.Y. Simmons; D.A. Ritchie
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 119 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
β¦ Synopsis
We report Raman scattering measurements of the acoustic and optic plasmons in electron bilayer systems consisting of two modulation-doped GaAs quantum wells. The measured dispersion relations are successfully fitted using the RPA, with self-consistent wave functions for the quantum well structures and the electron number densities in the wells as fitting parameters. Measurements of the temperature-dependent Landau damping of the acoustic plasmon are compared with the results of RPA calculations including a 0 K Hubbard correction; good agreement was obtained only for low temperatures (ΒΉ(ΒΉ $ /2), indicating the need for further theoretical work on local field corrections at higher temperatures.
π SIMILAR VOLUMES
Lateral wire arrays have been fabricated from a single modulation-doped GaAs quantum well employing reactive ion etching. Depending on the etch depth, the two-dimensional electron gas (2DEG) in the well acquires different degrees of modulation up to complete confinement. The different regimes are id