Raman scattering characterization of Mn composition and strain in Ga1–xMnx Sb/GaSb epitaxial layers
✍ Scribed by M. R. Islam; N. F. Chen; M. Yamada
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 226 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0232-1300
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✦ Synopsis
Raman scattering (RS) experiments have been performed for simultaneous determination of Mn composition and strain in Ga 1-x Mn x Sb thin films grown on GaSb substrate by liquid phase epitaxy technique. The Raman spectra obtained from various Ga 1-x Mn x Sb samples show only GaSb-like phonon modes whose frequency positions are found to have Mn compositional dependence. With the combination of epilayer strain model, RS and energy dispersive x-ray (EDX) experiments, the compositional dependence of GaSb-like LO phonon frequency is proposed both in strained and unstrained conditions. The proposed relationships are used to evaluate Mn composition and strain from the Ga 1-x Mn x Sb samples. The results obtained from the RS data are found to be in good agreement with those determined independently by the EDX analysis. Furthermore, the frequency positions of MnSb-like phonon modes are suggested by reduced-mass model.