Raman scattering and short range order in amorphous germanium

✍ Scribed by J.S. Lannin; N. Maley; S.T. Kshirsagar

• Publisher: Elsevier Science
• Year: 1985
• Tongue: English
• Weight: 331 KB
• Volume: 53
• Category: Article
• ISSN: 0038-1098
• DOI: 10.1016/0038-1098(85)90464-8

✦ Synopsis

Variations in short range order of amorphous Ge films are determined from a combination of depolarized Raman scattering, optical absorption, and previous radial distribution function studies. An estimated minimum value of the bond angle width of A8 = 9 °, obtained for evaporated, anneal stable a-Ge differs significantly from a recent EXAFS estimate. The maximum disorder observed in dc sputtered films deposited at ~gOK indicates that an -20% variation in bond angle width is possible in a-Ge. Substantial modification of the Raman spectrum of the low temperature film annealed at 300K also demonstrates that lower temperature structural relaxation processes involve changes in short range order.