Raman scattering of metastable phases of Si and Ge was performed in the pressure range 0 to 10 GPa. The results for Si are discussed in terms of the previously proposed BC8 and R8 structures. The first Raman spectrum of ST12-Ge is also reported. We suggest that photochemicallyinduced changes in ST12
β¦ LIBER β¦
Raman Linewidths of Phonons in Si, Ge, and SiC under Pressure
β Scribed by C. Ulrich; A. Debernardi; E. Anastassakis; K. Syassen; M. Cardona
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 227 KB
- Volume
- 211
- Category
- Article
- ISSN
- 0370-1972
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