𝔖 Bobbio Scriptorium
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Raman characterization of GaAs doped with Sn by laser assisted diffusion

✍ Scribed by J. Jiménez; E. Martin; B.J. García; J. Piqueras

Book ID
103954412
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
361 KB
Volume
20
Category
Article
ISSN
0921-5107

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## Abstract Sn:ZnO thin films with different Sn concentrations were grown by pulsed laser deposition (PLD) onto single‐crystal Si(001) substrates at an oxygen pressure of 2 × 10^–2^ mbar and substrate temperature of 600 °C. The targets used were high density Sn:ZnO pellets with different Sn concent