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Raman and time resolved photoluminescence studies on the effect of temperature on disorder production in SHI irradiated N-doped 6H-SiC crystals

✍ Scribed by Sivaji, K.; Viswanathan, E.; Selvakumar, S.; Sankar, S.; Kanjilal, D.


Book ID
122244212
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
995 KB
Volume
587
Category
Article
ISSN
0925-8388

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