Radiative recombination in phosphorus-doped CVD diamond
โ Scribed by Sauer, R. ;Teofilov, N. ;Thonke, K. ;Koizumi, S.
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 239 KB
- Volume
- 201
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
## Abstract Hallโeffect measurements on single crystal boronโdoped CVD diamond in the temperature interval 80โ450 K are presented together with SIMS measurements of the dopant concentration. Capacitanceโvoltage measurements on rectifying Schottky junctions manufactured on the boronโdoped structures
## Abstract Until now, phosphorus is the best substitutional dopant for nโtype diamond. Its incorporation is usually achieved using phosphine gas. However, organic precursors of phosphorus have been recently investigated. Among them, tertiarybutylphosphine (TBP) appears as an alternative to phosphi