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Radiation effects on the noise parameters of a 0.18 μm CMOS technology for detector front-end applications

✍ Scribed by M. Manghisoni; L. Rattier; G. Traversi

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 471 KB
Volume: 125
Category: Article
ISSN: 0920-5632
DOI: 10.1016/s0920-5632(03)91024-3

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✦ Synopsis

This paper presents a study of the effects of ionizing radiation on devices belonging to a 0.18 ,um CMOS process, in view of applications to the design of front-end integrated circuits for detectors in high energy physics experiments.

Static, signal and noise performances of devices with various gate dimensions were monitored before and after exposure to y-rays from a 6oCo source up to a 300 kGy(Si) total dose. 'I/ for NMCS (-0.8 V for PMOS) and the gate-to-source voltage VGS was set at +0.4 V (-0.4 V for PMOS), while body and source were tied together (Vss=O). In this conditions devices were biased in saturation

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