We report on JFET devices fabricated on high-resistivity silicon with a radiation detector technology. The problems affecting previous versions of these devices have been thoroughly investigated and solved by developing an improved fabrication process, which allows for a sizeable enhancement in the
β¦ LIBER β¦
Radiation damage studies of detector-compatible Si JFETs
β Scribed by Gian-Franco Dalla Betta; Maurizio Boscardin; Andrea Candelori; Lucio Pancheri; Claudio Piemonte; Lodovico Ratti; Nicola Zorzi
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 107 KB
- Volume
- 572
- Category
- Article
- ISSN
- 0168-9002
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