Quenching of molecular fluorescence near the surface of a semiconductor

✍ Scribed by T. Hayashi; T.G. Castner; Robert W. Boyd

• Book ID: 103018532
• Publisher: Elsevier Science
• Year: 1983
• Tongue: English
• Weight: 543 KB
• Volume: 94
• Category: Article
• ISSN: 0009-2614
• DOI: 10.1016/0009-2614(83)85032-5

✦ Synopsis

The fluorescence efficiency of thinkvaporated ftis of tetracene has been investigated as a function of dis*Gmce from the surface of Si and GaAs utilizing LiF as a spacer. The non-radiative decay rate decreases exponentially with spacer thickness below ==400 X. These results differ from theoretical predictions based on a dipole-dipole interaction between a single molecule and the semiconductor. * Permanent address: College of General Education, Kyoto tetracene were used as the sensitizer. The fluorescence University. Kyoto 606. Japan. efficiency of tetracene was measured as a function of 0 009-2614/83/0000-0000/S