Quenching of magnetization in (III, Mn)V magnetic semiconductor quantum wells under intense laser field assisted by the quasi-two-dimensional electron gas
✍ Scribed by H.D. Mikhail; A.L.A. Fonseca; M.A. Amato; D.A. Agrello; O.A.C. Nunes
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 301 KB
- Volume
- 150
- Category
- Article
- ISSN
- 0038-1098
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✦ Synopsis
Laser-induced quenching of ferromagnetism in (III 1-x , Mn x )V quantum well magnetic semiconductor is investigated. We propose a mechanism in which an increase of the magnon population of the ferromagnetic sample can be achieved due to the spin-flip electron-magnon scattering of the quasi-twodimensional electron gas inside the quantum well magnetic semiconductor in the presence of intense laser field. In this case, the laser field imposes a drift velocity to the quasi-two-dimensional electrons so that whenever this drift velocity exceeds the phase velocity of the spin waves, energy from the quasi-twodimensional electrons gained at the expense of the laser field is transferred to the magnon system thereby increasing the number of magnons (magnon amplification) and as a consequence, a loss of magnetization is obtained. Application for typical (III 1-x , Mn x )V ferromagnetic semiconductor quantum wells such as Ga 1-x Mn x As/AlAs (x ∼ 5%) provides a reasonable loss of magnetization up to 30 % for laser electric field strengths up to 4 × 10 5 V/cm which is below sample damage threshold field values.