✦ LIBER ✦

Quasiparticle self-consistent GW theory of III-V nitride semiconductors: Bands, gap bowing, and effective masses

✍ Scribed by Svane, A.; Christensen, N. E.; Gorczyca, I.; van Schilfgaarde, M.; Chantis, A. N.; Kotani, T.

Book ID: 120166707
Publisher: The American Physical Society
Year: 2010
Tongue: English
Weight: 190 KB
Volume: 82
Category: Article
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.82.115102

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Theory of band gap bowing of disordered

Theory of band gap bowing of disordered substitutional II–VI and III–V semiconductor alloys

✍ Mourad, D.; Czycholl, G. 📂 Article 📅 2012 🏛 Springer 🌐 English ⚖ 761 KB

Band gap bowings and anomalous pressure

Band gap bowings and anomalous pressure effects in III-V nitride alloys: Role of In-segregation

✍ Gorczyca, I. ;Suski, T. ;Christensen, N. E. ;Svane, A. 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 209 KB

## Abstract Using __ab initio__ calculations a comparison between In~__x__~Ga~1−__x__~N, In~__x__~Al~1−__x__~N and Ga~__x__~Al~1−__x__~N is performed to examine the role of indium in nitride alloys. The band gap, __E__~g~, as well as its pressure coefficient, d__E__~g~/d__p__, are studied as functi