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Quasilinear formulation with a simple remeshing scheme for the finite element based simulation of dopant diffusion in silicon

✍ Scribed by Amaratunga, G.A.J.; Ismail, R.


Book ID
114454231
Publisher
The Institution of Electrical Engineers
Year
1986
Weight
786 KB
Volume
133
Category
Article
ISSN
0143-7100

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