Quasi-static and dynamic switching of exchange biased micron-sized TMR junctions
✍ Scribed by C. Maunoury; C. Bilzer; C.K. Lim; T. Devolder; J. Wecker; L. Bär; C. Chappert
- Book ID
- 103843450
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 314 KB
- Volume
- 126
- Category
- Article
- ISSN
- 0921-5107
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✦ Synopsis
We study the quasi-static and dynamical switching of magnetic tunnel junction patterned in micron-sized cells with integrated field pulse line. The tunnel junctions are CoFe/AlO/CoFe with an exchange biasing layer of MnIr. Quasi-static characterizations have been used to determine anisotropy, coercive as well as exchange bias fields. Dynamic switching measurements are done by applying fast-rising magnetic field pulses (178 ps-10 ns) along the hard axis of the junction with a quasi-static easy-axis applied field. We identify the field conditions leading to no-switching, to directwriting and to toggle switching. We identify these field conditions up to the precessional limit, and construct the experimental dynamical astroïd. The magnetization trajectories leading to direct-writing and to toggle switching are well described by macrospin simulations.