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Quantum yield studies of disilane photodissociation at 193 nm by infrared diode laser spectroscopy

✍ Scribed by J.O. Chu; M.H. Begemann; J.S. Mckillop; J.M. Jasinski


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
618 KB
Volume
155
Category
Article
ISSN
0009-2614

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✦ Synopsis


Quantum yields for the loss of disilane and the formation of silane in the 193 nm photodissociation of disilane have been measured using time-resolved infrared diode laser absorption spectroscopy under single excimer laser pulse conditions at total pressures of 5 to 10 Torr in helium buffer gas. The total quantum yield for loss of disilane is 0.7 k 0.1 while the quantum yield for formation of silane is only 0.10+0.03.

The results suggest that numerous photodissociation pathways as well as non-photodissociative relaxation pathways exist for disilane excited near its electronic absorption threshold.


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