Quantum transport of spin-polarized carriers in quasi paramagnetic quantum wires: Green’s function formalism

Simulation of quantum transport in doubl

Simulation of quantum transport in double-gate MOSFETs using the non-equilibrium Green's function formalism in real-space: A comparison of four methods

✍ Yasser M. Sabry; Tarek M. Abdolkader; Wael F. Farouk 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 313 KB

Quantum effects play an important role in determining the double-gate (DG) MOSFETs characteristics. The non-equilibrium Green's function formalism (NEGF) in real-space (RS) representation provides a rigorous description of quantum transport in nanoscale devices. Unfortunately, the traditional NEGF f