Quantum size effects and transport phenomena in thin Bi layers

✍ Scribed by E.I. Rogacheva; S.G. Lyubchenko; O.N. Nashchekina; A.V. Meriuts; M.S. Dresselhaus

• Book ID: 104053430
• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 184 KB
• Volume: 40
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/j.mejo.2008.11.007

✦ Synopsis

For thin Bi films with thicknesses d ¼ 10-60 nm the dependences of the Hall coefficient, Seebeck coefficient, electrical conductivity, and Hall carrier mobility on d have been obtained at room temperature. Distinct oscillations of the transport properties with period Dd ¼ (571) nm have been observed in the thickness range d ¼ 25-60 nm and attributed to quantization of the energy spectrum of holes. It has been suggested that a deep minimum observed in the thickness dependences of the kinetic coefficients at d$25 nm is connected with the manifestation of the electronic spectrum quantization and/or manifestation of a semimetal-semiconductor transition. The experimental data are in good agreement with the results of theoretical calculations.