The e β ect of di β erent polarization orientations of the excitation source on the Raman and photoluminescence (PL) spectra of a porous silicon (PS) layer within two di β erent micro-regions was investigated. Two micro-regions (2 lm) along the (100) direction were studied, close to the crystalline sil
β¦ LIBER β¦
Quantum size effect in the photoluminescence of porous silicon layers
β Scribed by V.M. Asnin; N.S. Averkiev; A.B. Churilov; I.I. Markov
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 338 KB
- Volume
- 87
- Category
- Article
- ISSN
- 0038-1098
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