Quantum point contact with large subband energy spacings
โ Scribed by Um, Y. J.; Oh, Y. H.; Seo, M.; Lee, S.; Chung, Y.; Kim, N.; Umansky, V.; Mahalu, D.
- Book ID
- 111657688
- Publisher
- American Institute of Physics
- Year
- 2012
- Tongue
- English
- Weight
- 638 KB
- Volume
- 100
- Category
- Article
- ISSN
- 0003-6951
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๐ SIMILAR VOLUMES
We study the dependence of subband energies of a double quantum point contact on an external magnetic field applied in the transport direction. The comparison with experimental magnetotransport data allows us to identify the conditions for the modulation of anticrossing gaps and to map the subband s
The charging energy and quantum energy in silicon single electron transistors have been investigated. The devices were fabricated in the form of point contact MOSFETs, some of which show the Coulomb blockade oscillations at room temperature. The charging energy and quantum energy were derived by fit