Quantum mechanical calculation of the carrier distribution and the thickness of the inversion layer of a MOS field-effect transistor : A. P. Gnädinger and H. E. Talley, Solid-St. Electron.13 (1970), p. 13001

• Publisher: Elsevier Science
• Year: 1971
• Tongue: English
• Weight: 215 KB
• Volume: 10
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(71)90741-4