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Quantum electron and optoelectronic devices (invited paper)

โœ Scribed by Federico Capasso


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
510 KB
Volume
19
Category
Article
ISSN
0167-9317

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GaN-Based Quantum-Effect Electron Device
โœ Shirakashi, J. ;Shimizu, M. ;OkumuraShirakashi, H. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 153 KB ๐Ÿ‘ 1 views

We theoretically discuss GaN-based quantum-effect electron devices using quantum interference of hot electron waves in the conduction band of the large bandgap collector barrier. In this type of device, the quantum interference of electrons plays a main role in the operation principle and originates