Quantum effects in Si n-MOS inversion layer at high substrate concentration

✍ Scribed by Yasuyuki Ohkura

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 487 KB
• Volume: 33
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(90)90138-5