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Quantum-dot structures measuring Hamming distance for associative memories

✍ Scribed by Takashi Morie; Tomohiro Matsuura; Satoshi Miyata; Toshio Yamanaka; Makoto Nagata; Atsushi Iwata


Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
262 KB
Volume
27
Category
Article
ISSN
0749-6036

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✦ Synopsis


Two types of quantum-dot circuits measuring a Hamming distance using the Coulomb repulsion effect are proposed and analysed. They have structures where a quantum-dot array is arranged on a gate electrode of an ultrasmall MOSFET. The device parameters for successful operation are clarified from Monte Carlo simulation.