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Quantum cascade laser design based on impurity–band transitions of donors in Si/GeSi(1 1 1) heterostructures

✍ Scribed by N.A. Bekin; S.G. Pavlov


Book ID
104081344
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
163 KB
Volume
404
Category
Article
ISSN
0921-4526

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✦ Synopsis


The possibility of amplification of terahertz radiation due to optical transitions between a twodimensional state continuum (2D) and shallow-level donor states in Si/GeSi(111) superlattices with selectively d-doped quantum wells is analyzed theoretically. The mechanism of population inversion is based on fast ionization of donor centers by phonon-assisted tunneling into continuum of a lower subband in the neighboring quantum well. The fast tunneling is caused by hybridization of the impurity ground state and a 2D state continuum in the neighboring quantum well. It is shown that for the donor concentration of 5 Â 10 11 cm À2 per period the terahertz gain can be as high as 10 cm À1 in the wavelength range of 29-45 mm (6.5-10.2 THz).