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Quantitative Secondary Ion Mass Spectrometry Analysis of Carbon and Fluorine Impurities on Silicon Wafers Stored in Polymer Carrier Cases

โœ Scribed by Yamazaki, Hideyuki; Tamaoki, Makiko; Oohashi, Masaya


Book ID
127053702
Publisher
Institute of Pure and Applied Physics
Year
2000
Tongue
English
Weight
167 KB
Volume
39
Category
Article
ISSN
0021-4922

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Quantitative secondary ion mass spectrom
โœ Yamazaki, Hideyuki; Takahashi, Mamoru ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 262 KB ๐Ÿ‘ 2 views

Quantitative analysis of the native oxide on silicon wafers has been investigated by secondary ion mass spectrometry (SIMS) combined with an encapsulation method. In the encapsulation technique, the sample surface is covered with a thin รlm whose material is identical to that of the substrate of the