Quantitative secondary ion mass spectrom
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Yamazaki, Hideyuki; Takahashi, Mamoru
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Article
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1997
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John Wiley and Sons
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English
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Quantitative analysis of the native oxide on silicon wafers has been investigated by secondary ion mass spectrometry (SIMS) combined with an encapsulation method. In the encapsulation technique, the sample surface is covered with a thin รlm whose material is identical to that of the substrate of the