## Abstract Surface properties and the principal processes at the growth of gallium nitride on GaN (0001) face in ammoniaβbased are modeled using DFT (density functional theory β SIESTA code) ab initio calculations and 2βd diffusion analysis. The GaN growth methods are: ammoniaβsource MBE, MOVPE, a
Quantitative Model for the MBE-Growth of Ternary Nitrides
β Scribed by Averbeck, R. ;Riechert, H.
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 129 KB
- Volume
- 176
- Category
- Article
- ISSN
- 0031-8965
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