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Quantitative analysis of the elemental composition and electron concentration in AlGaN/GaN heterostructures with a two-dimensional electron channel by means of SIMS andC-Vprofiling

✍ Scribed by M. N. Drozdov; N. V. Vostokov; V. M. Danil’tsev; E. V. Demidov; Yu. N. Drozdov; O. I. Khrykin; V. I. Shashkin


Book ID
119990561
Publisher
Allerton Press Inc
Year
2012
Tongue
English
Weight
197 KB
Volume
76
Category
Article
ISSN
1062-8738

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