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Quadrupolar nutation NMR on a compound semiconductor gallium-arsenide

✍ Scribed by J. Takeuchi; H. Nakamura; H. Yamada; E. Kita; A. Tasaki; T. Erata

Book ID
104357827
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
482 KB
Volume
8
Category
Article
ISSN
0926-2040

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✦ Synopsis

Lattice defects in a compound semiconductor, gallium-arsenide are evaluated by two-dimensional nutation nuclear magnetic resonance. Especially in the case of indium doped gallium-arsenide, analysis of the nutation patterns indicates that the electric field gradient exists in the whole crystal. Asymmetry parameters and quadrupolar coupling constants are determined as approximately 1.0 and 93 kHz, respectively. These results suggest that the whole crystal is under slight strain. Through this work, it is demonstrated that a two-dimensional nutation nuclear magnetic resonance is the useful method to investigate the lattice defects in gallium-arsenide.

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