๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Pushing Around Electrons: Towards 2-D and 3-D Molecular Switches

โœ Scribed by Andrew C. Benniston

Publisher
John Wiley and Sons
Year
2005
Weight
8 KB
Volume
36
Category
Article
ISSN
0931-7597

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Mutual drag of 2D and 3D electron gases
Mutual drag of 2D and 3D electron gases in heterostructures
โœ P.M. Solomon; B. Laikhtman ๐Ÿ“‚ Article ๐Ÿ“… 1991 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 426 KB

The GaAs/A1GaAs semiconductor insulator semiconductor (SIS) structure used for high-performance field effect transistors has also been used in the study of parallel coupled transport between electrons in the FET n รท gate(3D) and channel (2D). At temperatures above 50K the predominant coupling involv

Towards rational design and synthesis of
Towards rational design and synthesis of aluminophosphates with 2-D layer and 3-D open-framework structures
โœ Jihong Yu; Jiyang Li; Ruren Xu ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 544 KB

This work presents our current progress on the rational design and synthesis of aluminophosphates with 2-D layer and 3-D open-framework structures. For the design of theoretical structures, we take two ways, one is using building block construction strategy to construct new 2-D networks and 3-D open