๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Pulsed melting of silicon (111) and (100) surfaces simulated by molecular dynamics

โœ Scribed by Abraham, Farid F.; Broughton, Jeremy Q.

Book ID
118220325
Publisher
The American Physical Society
Year
1986
Tongue
English
Weight
378 KB
Volume
56
Category
Article
ISSN
0031-9007

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

A comparison of the fcc(111) and (100) c
A comparison of the fcc(111) and (100) crystal-melt interfaces by molecular dynamics simulation
โœ Jeremy Q. Broughton; Farid F. Abraham ๐Ÿ“‚ Article ๐Ÿ“… 1980 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 327 KB

The molecular dynamics nmulatxm technique 1s employed to study the fee (100) and ( 111) crystal-melt mterfaces of a s) stem of Lennard-Jones atoms near the triple--pomt. A comparison of the stiucture and thermodynamics of the two mterfaces results in a simple picture concernmg the role of crystal on

Molecular dynamics simulations of ฮณ-alum
Molecular dynamics simulations of ฮณ-alumina surface stabilization by deposited silicon ions
โœ Slawomir Blonski; Stephen H. Garofalini ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 715 KB

Molecular dynamics simulations of the pure and doped surfaces of y-alumina have been performed. An onset of surface diffusion is observed in the pure samples near the temperature of 1200 K. The instability is caused by the cation vacancies adjacent to the surface. Silicon ions deposited into the vac