Pulsed laser deposition of quaternary Cu2ZnSnSe4thin films

✍ Scribed by Adhi Wibowo, Rachmat ;Soo Lee, Eun ;Munir, Badrul ;Ho Kim, Kyoo

• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 293 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200723144

✦ Synopsis

Abstract

We report the successful growth of quaternary Cu~2~ZnSnSe~4~ (CZTSe) thin films by pulsed laser deposition (PLD) using Nd:YAG laser. It was found that CZTSe films atomic ratios were close to target atomic ratios with a slight metal excess and selenium deficiency. Quaternary CZTSe films grew and crystallized as a stannite‐type structure even at room temperature. All CZTSe films showed a p‐type electrical conductivity with a high absorption coefficient of 10^4^–10^5^ cm^–1^, a bandgap of 1.5 eV and a carrier concentration of the order of 10^17^–10^18^ cm^–3^. These results show that pulsed laser deposition could be employed as a particularly effective deposition method for the preparation of quaternary compounds thin films. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)