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Pulsed laser crystallization and structuring of a-Ge on GaAs

โœ Scribed by Paulo V Santos; A.R Zanatta; F Dondeo; A Trampert; U Jahn; D Comedi; M.A.A Pudenzi; I Chambouleyron

Book ID
117145463
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
399 KB
Volume
299-302
Category
Article
ISSN
0022-3093

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## Abstract Four Ge~2~Sb~2~Te~5~ thin films were prepared by pulsed laser deposition (PLD) at 58, 100, 140, and 190โ€‰mJ/pulse laser energy, respectively. The influence of laser energy on the crystallization of Ge~2~Sb~2~Te~5~ was investigated. The result shows that laser energy has evident effect on