Pulsed bias/pulsed RF characterization measurement system of FET at constant intrinsic voltages

✍ Scribed by C. Gaquiere; J. P. Lafont; Y. Crosnier

• Book ID: 101269360
• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 132 KB
• Volume: 20
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/(sici)1098-2760(19990305)20:5<349::aid-mop20>3.0.co;2-u

✦ Synopsis

longitudinal dimension of the resonant gap L s lr2 a. Such a tuning results in opening and closing the waveguides C and D for microwave power transmission. Based on the efficient solution of the direct analysis problem, one can arrange an equally efficient numerical optimization of SB geometry, for example, to minimize the reflected power. Here, we empha-Ž size that the presented results are uniformly accurate accu-. racy is limited only by machine precision both in and off resonances. This is a clear advantage of the analytical regularization-based approach before direct modematching and finite-difference approximations.