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Pulse-Width Dependence in Current-Driven Magnetization Reversal Using GaMnAs-Based Double-Barrier Magnetic Tunnel Junction

โœ Scribed by J. Okabayashi; M. Watanabe; H. Toyao; T. Yamaguchi; J. Yoshino

Book ID
106428416
Publisher
Springer
Year
2007
Tongue
English
Weight
422 KB
Volume
20
Category
Article
ISSN
0896-1107

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๐Ÿ“œ SIMILAR VOLUMES

Layer-thickness dependence in tunneling
Layer-thickness dependence in tunneling magnetoresistance and current-driven magnetization reversal using GaMnAs-based double-barrier structures
โœ Maya Watanabe; Hiroshi Toyao; Jun Okabayashi; Takeshi Yamaguchi; Junji Yoshino ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 330 KB

We have investigated the layer-thickness dependence on tunneling magnetoresistance (TMR) in double-barrier structures using GaMnAs-based magnetic tunneling junctions in order to clarify the origin of low threshold current density for current-driven magnetization orientation reversal. The TMR charact