Pulse-induced low-power resistive switching in HfO[sub 2] metal-insulator-metal diodes for nonvolatile memory applications

✍ Scribed by Walczyk, Ch.; Wenger, Ch.; Sohal, R.; Lukosius, M.; Fox, A.; Dąbrowski, J.; Wolansky, D.; Tillack, B.; Müssig, H.-J.; Schroeder, T.

• Book ID: 121330437
• Publisher: American Institute of Physics
• Year: 2009
• Tongue: English
• Weight: 808 KB
• Volume: 105
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.3139282