p‐type zinc‐blende GaN on GaAs substrates
✍ Scribed by Lin, M. E.; Xue, G.; Zhou, G. L.; Greene, J. E.; Morkoc, H.
- Book ID
- 118160886
- Publisher
- American Institute of Physics
- Year
- 1993
- Tongue
- English
- Weight
- 540 KB
- Volume
- 63
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.109848
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## Abstract We have investigated the growth of bulk, free‐standing zinc‐blende (cubic) GaN layers by plasma‐assisted molecular beam epitaxy (PA‐MBE). The PA‐MBE technique was used for bulk crystal growth and GaN layers up to 100 µm in thickness were produced. We have established that the best struc
Layer resolved density of states has been calculated for N-and Ga-terminated gallium nitride (100) surfaces, using the semiempirical LCAO method with self-consistently correctedparameters for the surfaces. Surface states on both N-and Ga-terminated surfaces have been found. Localization properties o