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Proton induced single event upset cross section prediction for 0.15 μm six-transistor (6T) silicon-on-insulator static random access memories

✍ Scribed by Li, Lei; Zhou, Wanting; Liu, Huihua


Book ID
127080064
Publisher
Japan Science and Technology Information Aggregator, Electronic
Year
2012
Tongue
English
Weight
604 KB
Volume
49
Category
Article
ISSN
0022-3131

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